tm january 2007 FDMA520PZ single p-channel powertrench ? mosfet ?2006 fairchild semiconductor corporation FDMA520PZ rev.b www.fairchildsemi.com 1 FDMA520PZ single p-channel powertrench ? mosfet ? 20v, ? 7.3a, 30m features ? max r ds(on) = 30m at v gs = ?4.5v, i d = ?7.3a ? max r ds(on) = 53m at v gs = ?2.5v, i d = ?5.5a ? low profile - 0.8mm maximum - in the new package microfet 2x2 mm ? rohs compliant general description this device is desi gned specifically for battery charge or load switching in cellular handset and other ultraportable applications. it features a mosfet with low on-state resistance. the microfet 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage ?20 v v gs gate to source voltage 12 v i d drain current -continuous (note 1a) ?7.3 a -pulsed ?24 p d power dissipation (note 1a) 2.4 w power dissipation (note 1b) 0.9 t j , t stg operating and storage junction temperature range ?55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 52 c/w r ja thermal resistance, junction to ambient (note 1b) 145 device marking device package reel size tape width quantity 520 FDMA520PZ microfet 2x2 7?? 8mm 3000 units 5 1 6 2 3 4 d d s d d g bottom drain contact d d s g d d pin 1 drain source microfet 2x2 (bottom view)
FDMA520PZ single p-channel powertrench ? mosfet FDMA520PZ rev.b www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = ?250 p a, v gs = 0v ?20 v ' bv dss ' t j breakdown voltage temperature coefficient i d = ?250 p a, referenced to 25 c ?8.4 mv/ c i dss zero gate voltage drain current v ds = ?16v, v gs = 0v ?1 p a i gss gate to source leakage current v gs = 12v, v ds = 0v 10 p a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = ?250 p a ?0.6 ?1.1 ?1.5 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = ?250 p a, referenced to 25 c 3.5 mv/ c r ds(on) static drain to source on resistance v gs = ?4.5v, i d = ?7.3a 26 30 m : v gs = ?2.5v, i d = ?5.5a 42 53 v gs = ?4.5v, i d = ?7.3a ,t j = 125 c 36 55 g fs forward transconductance v ds = ?5v, i d = ?7.3a 22 s dynamic characteristics c iss input capacitance v ds = ?10v, v gs = 0v, f = 1mhz 1235 1645 pf c oss output capacitance 255 340 pf c rss reverse transfer capacitance 225 340 pf switching characteristics t d(on) turn-on delay time v dd = ?10v, i d = ?7.3a v gs = ?4.5v, r gen = 6 : 10 20 ns t r rise time 29 47 ns t d(off) turn-off delay time 83 133 ns t f fall time 74 119 ns q g total gate charge v dd = ?5v, i d = ?7.3a v gs = ?4.5v 14 20 nc q gs gate to source gate charge 2.9 nc q gd gate to drain ?miller? charge 4.4 nc drain-source diod e characteristics i s maximum continuous drain-source diode forward current ?2 a v sd source to drain diode forward voltage v gs = 0v, i s = ?2a ?0.8 ?1.2 v t rr reverse recovery time i f =?7.3a, di/dt = 100a/ p s 30 45 ns q rr reverse recovery charge 22 33 nc notes: 1: r t ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. 2: pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. 3: the diode connected between the gate and the source serves only as protection against esd. no gate overvoltage rating is implie d. a. 52c/w when mounted on a 1 in 2 pad of 2 oz copper b.145c/w when mounted on a minimum pad of 2 oz copper
FDMA520PZ single p-channel powertrench ? mosfet FDMA520PZ rev.b www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 01234 0 6 12 18 24 v gs = -2.5v v gs = -3v v gs = -4.5v v gs = -3.5v v gs = -4v pulse duration = 80 p s duty cycle = 0.5%max - i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 0 6 12 18 24 0.5 1.0 1.5 2.0 2.5 3.0 v gs = -2.5v v gs = -4.5v v gs = -4v v gs = -3.5v v gs = -3v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance -i d , drain current(a) n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = -7.3a v gs = -4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 2345678 10 20 30 40 50 60 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = -3.6a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 01234 0 6 12 18 24 v dd = -5v t j =-55 o c t j = 25 o c t j = 125 o c pulse duration = 80 p s duty cycle = 0.5%max - i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0001 0.001 0.01 0.1 1 10 30 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMA520PZ single p-channel powertrench ? mosfet FDMA520PZ rev.b www.fairchildsemi.com 4 figure 7. 0 7 14 21 28 35 0 2 4 6 8 10 i d = -7.3a v dd = -15v v dd = -5v -v gs , gate to source voltage(v) - q g , gate charge(nc) v dd = -10v gate charge characteristics figure 8. 0.1 1 10 100 1000 30 20 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) -v ds , drain to source voltage (v) 3000 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 03691215 1e-9 1e-8 1e-7 1e-6 1e-5 1e-4 t j = 25 o c t j = 125 o c v gs = 0v -i g , gate leakage current(a) -v gs , gate to source voltage(v) gate leakage current vs gate to source voltage f i g u r e 1 0 . f o r w a r d b i a s s a f e 0.1 1 10 0.01 0.1 1 10 60 60 100us 10s r ds(on) limit 1ms 10ms 100ms 1s dc i d , drain current (a) v ds , drain to source voltage (v) v gs =4.5v single pulse r t ja = 145 o c/w t a = 25 o c operating area figure 11. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0 30 60 90 120 150 single pulse r t ja = 145 o c/w t a =25 o c p ( pk ) , peak transient power (w) t, pulse width (s) s i n g l e p u l s e m a x i m u m power dissipation figure 12. transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 0.005 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
FDMA520PZ single p-channel powertrench ? mosfet FDMA520PZ rev.b www.fairchildsemi.com 5 notes: a. not fully conform to jedec registration mo-229 dated aug/2003. b. dimensions are in millimeters. c. dimensions and tolerances per asmey14.5m,1994 mlp06lreva
FDMA520PZp rev. b www.fairchildsemi.com 6 FDMA520PZ single p-channel powertrench ? mosfet rev. i22 trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described here in; neither does it convey any lice nse under its patent rights, nor the rights of others. these specifications do not expand th e terms of fairchild?s worldwide terms and conditions, specifically the warranty therei n, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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